BSC076N06NS3GATMA1 vs BSZ130N03LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC076N06NS3GATMA1 disebabkan oleh Infineon dan BSZ130N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC076N06NS3GATMA1 BSZ130N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ —
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (Ta) 2.5 W 2.1 W
Power Dissipation (Tc) 69 W 25 W
Gambaran Suhu Operasi -55C to +150C -55 C to +150 C (junction)
Kemasan PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited) 1 (per JEDEC J-STD-020)
RoHS Compliance Compliant —
Boson Bebas Yes (per Infineon product page) Yes
Part Family — OptiMOS 25V / 30V
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Ta=25 C) — 10 A
Arus Kumpal Tetap (TC=25°C) — 35 A
On-State Resistance Rds(on) max @ Vgs=10V — 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA — 2.2 V
Status RoHS — Compliant
Lead-Free — Yes
Qualification — Industrial / Commercial (non-automotive)

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