BSC076N06NS3GATMA1 vs BSZ130N03LSGATMA1 Comparison

Detailed side-by-side comparison of BSC076N06NS3GATMA1 by Infineon and BSZ130N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC076N06NS3GATMA1 BSZ130N03LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 β€”
Technology N-Channel Trench MOSFET β€”
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at TC=25C 50 A β€”
On-Resistance RDS(on) max at VGS=10V 7.6 mΞ© β€”
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Power Dissipation (Ta) 2.5 W 2.1 W
Power Dissipation (Tc) 69 W 25 W
Operating Temperature Range -55C to +150C -55 C to +150 C (junction)
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1 (per JEDEC J-STD-020)
RoHS Compliance Compliant β€”
Halogen-Free Yes (per Infineon product page) Yes
Part Family β€” OptiMOS 25V / 30V
Polarity / Channel Type β€” N-Channel Enhancement Mode
Drain-Source Voltage (Vds) β€” 30 V
Continuous Drain Current (Ta=25 C) β€” 10 A
Continuous Drain Current (Tc=25 C) β€” 35 A
On-State Resistance Rds(on) max @ Vgs=10V β€” 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA β€” 2.2 V
RoHS Status β€” Compliant
Lead-Free β€” Yes
Qualification β€” Industrial / Commercial (non-automotive)

Datasheets & Resources

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