BSC077N12NS3GATMA1 vs BSC0906NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC077N12NS3GATMA1 disebabkan oleh Infineon dan BSC0906NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC077N12NS3GATMA1 BSC0906NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 3 (120 V) —
Jenis Transistor N-Channel MOSFET (enhancement-mode trench) —
Drain-Source Voltage (VDS) 120 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta 13.4 A 18 A
Continuous Drain Current (ID) at Tc 98 A 63 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance RDS(on) max @ VGS=10V 7.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Tc 139 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 8
Aras MSL 1 —
Status RoHS Compliant Compliant
Automotive Grade Yes (per Infineon part number suffix / datasheet) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology — OptiMOS
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg @ VGS=10V]
Gambaran Suhu Operasi — -55C to +150C (junction, typical)

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