BSC123N08NS3GATMA1 vs BSC0906NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC123N08NS3GATMA1 disebabkan oleh Infineon dan BSC0906NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC123N08NS3GATMA1 BSC0906NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 3 —
Channel Type N-Channel —
Configuration Single with built-in body diode —
Maximum Drain-Source Voltage (VDS) 80 V —
Maximum Continuous Drain Current (ID, Tc) 55 A —
Maximum Continuous Drain Current (ID, Ta) 11 A —
Maximum Pulsed Drain Current [DATA_NEEDED: pulsed drain current] —
Maximum RDS(on) @ VGS=10 V 12.3 mOhm —
Maximum Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: Qg @ VGS=10V]
Power Dissipation (Tc) 66 W —
Power Dissipation (Ta) 2.5 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant with exemption Compliant
Automotive Qualified Yes (AEC-Q101) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 18 A
Continuous Drain Current (ID) at Tc — 63 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology — OptiMOS
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gambaran Suhu Operasi — -55C to +150C (junction, typical)
Kiraan Pin — 8

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