BSF134N10NJ3GXUMA1 vs BSC014NE2LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSF134N10NJ3GXUMA1 disebabkan oleh Infineon dan BSC014NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSF134N10NJ3GXUMA1 BSC014NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 100 V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 25 V
Continuous Drain Current (ID) at TA=25°C 9 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
Power Dissipation (PD) at TA=25°C 2.2 W —
Power Dissipation (PD) at TC=25°C 43 W —
Kemasan MG-WDSON-2 (CanPAK M) PG-TDSON-8-7 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single with built-in diode —
Terminal Position Bottom —
Terminal Finish Silver Nickel —
Gambaran Suhu Operasi -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Technology Trench-gate OptiMOS planar N-Channel MOSFET (OptiMOS 25V)
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max value] —
Body Diode Reverse Recovery [DATA_NEEDED: trr value] —
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Ta) — 33 A
Continuous Drain Current (ID, Tc) — [DATA_NEEDED: Tc condition rating]
Pulsed Drain Current (IDM, Tc) — 100 A
On-State Resistance RDS(on) — 1.4 mOhm (typ) at VGS = 10 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ at VGS=10V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 74 W
Suhu Hubungan Operasi — -55 °C to +150 °C
Lead-Free — Yes

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