BSF134N10NJ3GXUMA1 vs BSF134N10NJ3GXUMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSF134N10NJ3GXUMA1 disebabkan oleh Infineon dan BSF134N10NJ3GXUMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSF134N10NJ3GXUMA2 BSF134N10NJ3GXUMA2 - 100V OptiMOS N-Ch MOSFET 40A | Infineon

BSF134N10NJ3GXUMA2 - 100V OptiMOS N-Ch MOSFET 40A | Infineon

BSF134N10NJ3GXUMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 100 V OptiMOS 100V
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TA=25°C 9 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
Power Dissipation (PD) at TA=25°C 2.2 W —
Power Dissipation (PD) at TC=25°C 43 W —
Kemasan MG-WDSON-2 (CanPAK M) MG-WDSON-2 (surface mount, CanPAK-like)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single with built-in diode —
Terminal Position Bottom —
Terminal Finish Silver Nickel —
Gambaran Suhu Operasi -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Technology Trench-gate OptiMOS planar OptiMOS 100V (low RDS(on), fast switching)
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max value] —
Body Diode Reverse Recovery [DATA_NEEDED: trr value] —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 9 A
Continuous Drain Current (ID) at Tc — 40 A
Power Dissipation (PD) at Ta — 2.2 W
Power Dissipation (PD) at Tc — 43 W
Polarity — N-Channel
Operating Mode — Enhancement-mode
Primary Applications — SMPS, motor control, solar, telecom/datacom DC-DC

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