BSF134N10NJ3GXUMA2 vs BSF134N10NJ3GXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSF134N10NJ3GXUMA2 disebabkan oleh Infineon dan BSF134N10NJ3GXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSF134N10NJ3GXUMA2 BSF134N10NJ3GXUMA2 - 100V OptiMOS N-Ch MOSFET 40A | Infineon

BSF134N10NJ3GXUMA2 - 100V OptiMOS N-Ch MOSFET 40A | Infineon

BSF134N10NJ3GXUMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSF134N10NJ3GXUMA2 BSF134N10NJ3GXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 100V OptiMOS 100 V
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Ta 9 A —
Continuous Drain Current (ID) at Tc 40 A —
Power Dissipation (PD) at Ta 2.2 W —
Power Dissipation (PD) at Tc 43 W —
Kemasan MG-WDSON-2 (surface mount, CanPAK-like) MG-WDSON-2 (CanPAK M)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 100V (low RDS(on), fast switching) Trench-gate OptiMOS planar
Polarity N-Channel —
Operating Mode Enhancement-mode —
Status RoHS Compliant Compliant
Primary Applications SMPS, motor control, solar, telecom/datacom DC-DC —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 9 A
Continuous Drain Current (ID) at TC=25°C — 40 A
Power Dissipation (PD) at TA=25°C — 2.2 W
Power Dissipation (PD) at TC=25°C — 43 W
Configuration — Single with built-in diode
Terminal Position — Bottom
Terminal Finish — Silver Nickel
Gambaran Suhu Operasi — -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet]
Aras MSL — [DATA_NEEDED: MSL rating]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max value]
Body Diode Reverse Recovery — [DATA_NEEDED: trr value]

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