BSP315PH6327XTSA1 vs BSD235CH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP315PH6327XTSA1 disebabkan oleh Infineon dan BSD235CH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP315PH6327XTSA1 BSD235CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology OptiMOS (enhancement mode) OptiMOS™ low-voltage
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -1.17 A (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55 °C to +150 °C (junction)
Kemasan PG-SOT223-4 (SOT-223-3 pinout with exposed tab) —
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
Aras MSL 1 (per JEDEC J-STD-020) 1
Manufacturer — Infineon Technologies
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) — 20 V
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Polarity — N-channel + P-channel
Channel Mode — Enhancement
Status RoHS — Compliant (lead-free)
Kiraan Pin — 6

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga