BSP316PH6327XTSA1 vs BSP315PH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP316PH6327XTSA1 disebabkan oleh Infineon dan BSP315PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSP316PH6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical and min/max] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Kemasan | PG-SOT223-4 (TO-261-4) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | -55 C to +150 C (junction) |
| Bilangan Pin | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | OptiMOS (enhancement mode) |
| Status RoHS | Compliant | — |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -1.17 A (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |