BSS192PH6327FTSA1 vs BSP88H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS192PH6327FTSA1 disebabkan oleh Infineon dan BSP88H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS192PH6327FTSA1 BSP88H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology MOSFET (Metal Oxide) SIPMOS (planar enhancement mode)
Drain-to-Source Voltage (Vdss) 250 V —
Continuous Drain Current (Id) @ 25C 190 mA (Ta) —
Power Dissipation (Pd) 1 W (Ta) —
Drive Voltage (Max Rds On, Min Rds On) 2.8 V, 10 V —
Rds On (Max) @ Id, Vgs [DATA_NEEDED: Rds On max @ Vgs] —
Vgs(th) (Max) [DATA_NEEDED: gate threshold voltage max] —
Vgs(th) (Typ) [DATA_NEEDED: gate threshold voltage typ] —
Kemasan PG-SOT89 (SOT-89-3, 4-pin 3+Tab) PG-SOT223-4 (SOT-223-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max / operating temp] —
Automotive Qualification AEC-Q101 (per distributor listing) AEC-Q101 qualified
Series SIPMOS Small-Signal-Transistor —
Part Status Active —
Status RoHS [DATA_NEEDED: explicit RoHS status from datasheet] —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Configuration — Single
Suhu Operasi — -55 C to +150 C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Lead Plating — Pb-free
RoHS Compliance — Compliant
Aras MSL — [DATA_NEEDED: MSL level]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

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