BSZ024N04LS6ATMA1 vs IPD038N06NF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ024N04LS6ATMA1 disebabkan oleh Infineon dan IPD038N06NF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSZ024N04LS6ATMA1 | IPD038N06NF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS (Trench) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Ta) | 24 A | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Pulsed Drain Current (I_DM) | 130 A | — |
| R_DS(on) Max @ V_GS=10V | 2.4 mΩ | — |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | — |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | — |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | — |
| Input Capacitance (C_iss) | 1.8 nF | — |
| Output Capacitance (C_oss) | 19 pF | — |
| Power Dissipation (P_D, Ta) | 2.5 W | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| Suhu Hubungan Operasi | -55°C to +175°C | -55°C to +175°C |
| Kemasan | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount, top-side drain pad | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Continuous Drain Current (ID) at TA=25°C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 3.85 mΩ max |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Gate Charge (Qg) at VGS=10V | — | 68 nC |
| Input Capacitance (Ciss) | — | 6700 pF |
| Output Capacitance (Coss) | — | 670 pF |
| Reverse Transfer Capacitance (Crss) | — | 43 pF |
| Power Dissipation (PD) at TA=25°C | — | 3 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| Channel Mode | — | Enhancement |