BSZ024N04LS6ATMA1 vs IPD038N06NF2SATMA1 比較

詳細並排比較 BSZ024N04LS6ATMA1 由 Infineon 與 IPD038N06NF2SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSZ024N04LS6ATMA1 BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 ✓ 啟用中
Infineon
IPD038N06NF2SATMA1 IPD038N06NF2SATMA1 - 60V 120A OptiMOS N-MOSFET | Infineon

IPD038N06NF2SATMA1 - 60V 120A OptiMOS N-MOSFET | Infineon

IPD038N06NF2SATMA1 ✓ 啟用中

規格比較

參數 BSZ024N04LS6ATMA1 IPD038N06NF2SATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Technology OptiMOS 6 (shielded-gate trench) OptiMOS (Trench)
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Ta) 24 A —
Continuous Drain Current (I_D, Tc) 40 A —
Pulsed Drain Current (I_DM) 130 A —
R_DS(on) Max @ V_GS=10V 2.4 mΩ —
R_DS(on) Max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at 4.5V] —
Gate Threshold Voltage (V_GS(th)) 2.3 V (typical) —
Total Gate Charge (Q_g) @ V_GS=10V 25 nC —
Input Capacitance (C_iss) 1.8 nF —
Output Capacitance (C_oss) 19 pF —
Power Dissipation (P_D, Ta) 2.5 W —
Power Dissipation (P_D, Tc) 75 W —
工作接面溫度 -55°C to +175°C -55°C to +175°C
封裝 PG-TSDSON-8-FL (3.3 mm x 3.3 mm) PG-TO252-3 (DPAK)
安裝類型 Surface Mount, top-side drain pad Surface Mount
RoHS 狀態 Compliant Compliant
MSL 等級 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 120 A
Continuous Drain Current (ID) at TA=25°C — 20 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) max — ±20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 3.85 mΩ max
Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Typical Gate Charge (Qg) at VGS=10V — 68 nC
Input Capacitance (Ciss) — 6700 pF
Output Capacitance (Coss) — 670 pF
Reverse Transfer Capacitance (Crss) — 43 pF
Power Dissipation (PD) at TA=25°C — 3 W
Power Dissipation (PD) at TC=25°C — 107 W
Channel Mode — Enhancement

資料表與資源

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