BSZ031NE2LS5ATMA1 vs BSC014N04LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ031NE2LS5ATMA1 disebabkan oleh Infineon dan BSC014N04LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSZ031NE2LS5ATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ031NE2LS5ATMA1 | — |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) max | 25 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | 20 V |
| Continuous Drain Current (ID) at Ta=25C | 19 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | — |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 30 W | — |
| Suhu Hubungan Operasi | -55 C to +150 C | — |
| Kemasan | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL] | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Series | — | OptiMOS 5 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Technology | — | Trench (OptiMOS 5, thin-wafer) |