BSZ060NE2LSATMA1 vs BSC011N03LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ060NE2LSATMA1 disebabkan oleh Infineon dan BSC011N03LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSZ060NE2LSATMA1 | BSC011N03LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ060NE2LSATMA1 | — |
| Technology | OptiMOS™ (N-Channel Trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | — |
| Pulsed Drain Current (IDM) | 44 A | [DATA_NEEDED: pulsed IDM value] |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 26 W | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-7 (Surface Mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020) |
| Shipping Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS™ 30 V |
| Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 37 A |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| On-State Resistance RDS(on) at VGS=10V | — | 1.1 mΩ (typical) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 96 W |
| Suhu Hubungan Operasi | — | -55 °C to +150 °C |