BSZ065N03LSATMA1 vs BSC050N03LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ065N03LSATMA1 disebabkan oleh Infineon dan BSC050N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSZ065N03LSATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| Kemasan / Case | PG-TSDSON-8-FL (S308) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS 3 (N-channel trench MOSFET) |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55 C to +150 C |
| Aras MSL | 1 | 1 |
| Status RoHS | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Part Number | — | BSC050N03LSGATMA1 |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 80 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | — | 5 mOhm |
| Power Dissipation (PD) at Tc | — | 50 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Kemasan | — | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Channel Type | — | N-Channel |