BSZ065N03LSATMA1 vs BSC050N03LSGATMA1 比較
詳細並排比較 BSZ065N03LSATMA1 由 Infineon 與 BSC050N03LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ065N03LSATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| 封裝 / 外殼 | PG-TSDSON-8-FL (S308) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS 3 (N-channel trench MOSFET) |
| 工作溫度範圍 | -55C to +150C (junction) | -55 C to +150 C |
| MSL 等級 | 1 | 1 |
| RoHS 狀態 | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Part Number | — | BSC050N03LSGATMA1 |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 80 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | — | 5 mOhm |
| Power Dissipation (PD) at Tc | — | 50 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| 封裝 | — | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Channel Type | — | N-Channel |