BSZ900N20NS3GATMA1 vs BSC060N10NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ900N20NS3GATMA1 disebabkan oleh Infineon dan BSC060N10NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSZ900N20NS3GATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Part Number | BSZ900N20NS3GATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΩ | — |
| Typical RDS(on) @ VGS=10V | 77 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD, Tc=25C) | 62.5 W | 125 W |
| Suhu Hubungan Operasi | -55C to +150C | -55 C to +150 C |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Kemasan | PG-TSDSON-8 (TDSON-8 FL) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| ESD Protection | Yes (integrated) | — |
| Avalanche Energy Rated | Yes (EAS) | — |
| Part Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Ta) | — | 14.9 A |
| Continuous Drain Current (ID, Tc) | — | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6 mOhm |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 3.5 V |
| Lead-Free | — | Yes |
| Boson Bebas | — | [DATA_NEEDED: halogen status] |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS value] |