DG441DYZ vs ISL43240IRZ Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci DG441DYZ disebabkan oleh Renesas Electronics dan ISL43240IRZ disebabkan oleh Renesas Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Renesas Electronics
DG441DYZ - Quad SPST CMOS Analog Switch, 85Ω, 16-SOIC | Renesas
DG441DYZ ✓ AktifPengandingan Spesifikasi
| Parametr | DG441DYZ | ISL43240IRZ |
|---|---|---|
| Merek | Renesas Electronics | Renesas Electronics |
| Kategori | Interface ICs | Interface ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Switch Type | SPST (Single-Pole Single-Throw), 4 independent channels | — |
| Number of Circuits | 4 | — |
| On-Resistance (Ron) | 85 Ω (typical) | 25 Ω typical |
| On-Resistance Flatness | [DATA_NEEDED: Ron flatness] | — |
| Supply Voltage (Single) | +5 V to +34 V | — |
| Supply Voltage (Dual) | ±5 V to ±22 V | — |
| Maximum Signal Voltage | 44 V (allows 40 Vp-p signals) | — |
| Turn-On Time (tON) | 250 ns (typical) | — |
| Turn-Off Time (tOFF) | [DATA_NEEDED: tOFF] | — |
| Bandwidth (-3 dB) | 200 MHz (typical) | — |
| Channel-to-Channel Crosstalk | [DATA_NEEDED: crosstalk] | — |
| Off-Isolation | [DATA_NEEDED: off-isolation] | — |
| Leakage Current (Switch Off) | [DATA_NEEDED: Ioff] | — |
| Charge Injection | [DATA_NEEDED: QINJ] | — |
| Logic Input Compatibility | TTL and CMOS, with on-chip Vref threshold translator | TTL/CMOS, VIH ≥ 1.65 V, VIL ≤ 0.5 V |
| Suhu Operasi | -40 °C to +85 °C | -40 °C to +85 °C (Industrial) |
| Kemasan | 16-SOIC (0.154" / 3.90 mm width) | 20-QFN (4x4 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Latch-up Protection | Yes (epitaxial CMOS process) | — |
| Status RoHS | Compliant (per Heisener listing) | Compliant |
| Fungsi | — | Quad SPDT Analog Switch (4x SPDT) |
| Number of Channels | — | 4 circuits, Switch 2:1 (SPDT) |
| Ron Flatness | — | 5 Ω maximum |
| Single-Supply Range | — | +2 V to +12 V |
| Dual-Supply Range | — | ±2 V to ±6 V |
| Switching Time tON | — | 52 ns |
| Switching Time tOFF | — | 40 ns |
| Leakage Current | — | 5 nA maximum |
| Power Consumption | — | 5 µW typical |