EP4CE15E22C8N vs EP4CE15F1717N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE15E22C8N disebabkan oleh Intel dan EP4CE15F1717N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP4CE15E22C8N | EP4CE15F1717N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements (LEs) | 15,408 | — |
| Embedded Memory (Bits) | 516,096 | — |
| Embedded Memory (Kbits) | 504 | — |
| Embedded 18x18 Multipliers | 56 | 56 |
| General Purpose PLLs | 4 | — |
| User I/O Pins | 81 | — |
| Core Voltage | 1.2 V | — |
| Suhu Operasi | 0C to +85C (Commercial) | 0C to +85C (commercial "N" suffix) |
| Speed Grade | 8 | 7 |
| Kemasan | 144-pin EQFP (Enhanced QFP) with Exposed Pad | 256-ball F-BGA (FBGA-256) |
| Jenis Pemasangan | Surface Mount | — |
| Aras MSL | 3 | 3 (168 hours) |
| Status RoHS | Compliant | Compliant |
| Process Technology | 60 nm low-power CMOS | 60 nm low-power |
| Configuration Method | SRAM-based, AS / PS / JTAG | — |
| Logic Elements (LE) | — | 15,408 |
| Embedded Memory | — | 516,096 bits (56 M9K blocks) |
| Maximum User I/Os | — | 165 |
| PLLs | — | 4 |
| Global Clock Networks | — | 20 |
| Core Voltage (VCCINT) | — | 1.0 V / 1.2 V |
| I/O Voltage (VCCIO) | — | 1.2 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V |
| Package Pitch | — | 1.0 mm |
| LVDS Performance | — | Up to 343 Mbps |
| Configuration Mode | — | External serial/parallel flash (volatile SRAM) |