EP4CE15E22C8N vs EP4CE15F1717N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE15E22C8N sa pamamagitan ng Intel at EP4CE15F1717N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EP4CE15E22C8N - Cyclone IV E FPGA, 15K LE, 144-EQFP | Intel / Altera
EP4CE15E22C8N ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | EP4CE15E22C8N | EP4CE15F1717N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements (LEs) | 15,408 | — |
| Embedded Memory (Bits) | 516,096 | — |
| Embedded Memory (Kbits) | 504 | — |
| Embedded 18x18 Multipliers | 56 | 56 |
| General Purpose PLLs | 4 | — |
| User I/O Pins | 81 | — |
| Core Voltage | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C (Commercial) | 0C to +85C (commercial "N" suffix) |
| Speed Grade | 8 | 7 |
| Packhaging | 144-pin EQFP (Enhanced QFP) with Exposed Pad | 256-ball F-BGA (FBGA-256) |
| Uri ng Pagpapasok | Surface Mount | — |
| Level ng MSL | 3 | 3 (168 hours) |
| Tindminan RoHS | Compliant | Compliant |
| Process Technology | 60 nm low-power CMOS | 60 nm low-power |
| Configuration Method | SRAM-based, AS / PS / JTAG | — |
| Logic Elements (LE) | — | 15,408 |
| Embedded Memory | — | 516,096 bits (56 M9K blocks) |
| Maximum User I/Os | — | 165 |
| PLLs | — | 4 |
| Global Clock Networks | — | 20 |
| Core Voltage (VCCINT) | — | 1.0 V / 1.2 V |
| I/O Voltage (VCCIO) | — | 1.2 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V |
| Package Pitch | — | 1.0 mm |
| LVDS Performance | — | Up to 343 Mbps |
| Configuration Mode | — | External serial/parallel flash (volatile SRAM) |