H5AN8G6NAFR-RDC vs H5AN8G6NCJR-PBC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR-RDC disebabkan oleh SK hynix dan H5AN8G6NCJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5AN8G6NAFR-RDC H5AN8G6NCJR-PBC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Memory Density 8 Gb —
Organisasi 512M x 16 —
Tegangan Pemberi Arus 1.2 V —
Antaramuka DDR4 (JEDEC-standard) Parallel, synchronous to both clock edges
Access Mode Multi Bank Page Burst —
Package Code TFBGA —
Package Shape Rectangular —
Number of Terminals 96 —
Jenis Pemasangan Surface Mount Surface Mount
Temperature Grade OTHER (per Partstack listing) —
Technology CMOS —
Status RoHS Compliant (Lead-Free & Halogen-Free) Compliant
Speed Grade -RDC (see datasheet for bin timing) —
Family H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Max Clock Rate [DATA_NEEDED: max clock rate for -RDC bin] —
Suhu Operasi [DATA_NEEDED: operating temperature range] 0C to +95C
Memory Organization — 8Gb x16 (512M x 16)
Saiz Ingatan — 8 Gbit
Kadar Data — [DATA_NEEDED: exact speed grade of -PBC suffix]
Family Data Rate Range — Up to 2666 Mbps (family: H5AN8G6NCJR-xxC)
Supply Voltage (VDD) — 1.2 V
Kemasan — FBGA-96 (96-ball fine-pitch BGA)
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask Function — Yes
Write Leveling — Yes
CRC Function — Yes
Dynamic On-Die Termination (ODT) — Yes
ZQ Calibration — Yes
Lead-Free / Halogen-Free — Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant)

Laporan Datasheet & Sumber

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