H5AN8G6NAFR vs MT40A512M16JY-075E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR disebabkan oleh SK hynix dan MT40A512M16JY-075E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NAFR | MT40A512M16JY-075E |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kadar Data | 2400 MT/s | 2666 MT/s |
| Kemasan | 96-ball FBGA | 96-FBGA (8x14) |
| Suhu Operasi | 0°C to +85°C | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | — |
| CRC | Yes | — |
| Write Leveling | Yes | — |
| Saiz Ingatan | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Antaramuka | — | Parallel |
| Jenis Pemasangan | — | Surface Mount |
| Gambaran Suhu Operasi | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Status RoHS | — | Compliant |
| Ciri-ciri | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |