H5AN8G6NCJR-PBC vs H5AN8G6NAFR-RDC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NCJR-PBC disebabkan oleh SK hynix dan H5AN8G6NAFR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5AN8G6NCJR-PBC H5AN8G6NAFR-RDC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Memory Organization 8Gb x16 (512M x 16) —
Saiz Ingatan 8 Gbit —
Kadar Data [DATA_NEEDED: exact speed grade of -PBC suffix] —
Family Data Rate Range Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) —
Supply Voltage (VDD) 1.2 V —
Kemasan FBGA-96 (96-ball fine-pitch BGA) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi 0C to +95C [DATA_NEEDED: operating temperature range]
Antaramuka Parallel, synchronous to both clock edges DDR4 (JEDEC-standard)
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Function Yes —
Write Leveling Yes —
CRC Function Yes —
Dynamic On-Die Termination (ODT) Yes —
ZQ Calibration Yes —
Lead-Free / Halogen-Free Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) —
Status RoHS Compliant Compliant (Lead-Free & Halogen-Free)
Memory Density — 8 Gb
Organisasi — 512M x 16
Tegangan Pemberi Arus — 1.2 V
Access Mode — Multi Bank Page Burst
Package Code — TFBGA
Package Shape — Rectangular
Number of Terminals — 96
Temperature Grade — OTHER (per Partstack listing)
Technology — CMOS
Speed Grade — -RDC (see datasheet for bin timing)
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Max Clock Rate — [DATA_NEEDED: max clock rate for -RDC bin]

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