H5AN8G6NCJR-PBC vs H5AN8G6NAFR-RDC 比較
詳細並排比較 H5AN8G6NCJR-PBC 由 SK hynix 與 H5AN8G6NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G6NCJR-PBC | H5AN8G6NAFR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 8Gb x16 (512M x 16) | — |
| 記憶體容量 | 8 Gbit | — |
| 資料速率 | [DATA_NEEDED: exact speed grade of -PBC suffix] | — |
| Family Data Rate Range | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封裝 | FBGA-96 (96-ball fine-pitch BGA) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| 介面 | Parallel, synchronous to both clock edges | DDR4 (JEDEC-standard) |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Lead-Free / Halogen-Free | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) | — |
| RoHS 狀態 | Compliant | Compliant (Lead-Free & Halogen-Free) |
| Memory Density | — | 8 Gb |
| 組織 | — | 512M x 16 |
| 供應電壓 | — | 1.2 V |
| Access Mode | — | Multi Bank Page Burst |
| Package Code | — | TFBGA |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER (per Partstack listing) |
| Technology | — | CMOS |
| Speed Grade | — | -RDC (see datasheet for bin timing) |
| Family | — | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Max Clock Rate | — | [DATA_NEEDED: max clock rate for -RDC bin] |