H5AN8G6NCJR-XXC vs H5AN8G6NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NCJR-xxC disebabkan oleh SK hynix dan H5AN8G6NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NCJR-xxC | H5AN8G6NDJR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| Kadar Data | 2666 Mbps (VKC speed grade) | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Supply | 2.5 V | — |
| Operating Temperature (TC) | 0°C to 95°C | — |
| Kemasan | 96-ball FBGA | 96-ball FBGA (13mm x 7.5mm) |
| Number of Banks | 8 | — |
| Burst Length | 8, 4 (with burst chop) | 8 (BL8), 4 (BC4) |
| On-Die Termination (ODT) | Supported | — |
| Self-Refresh | Temperature-compensated (TCSR) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Jenis Pemasangan | Surface Mount | — |
| Tegangan Pemberi Arus | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Latensi CAS | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |