H5AN8G6NDJR vs H5AN8G6NAFR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NDJR disebabkan oleh SK hynix dan H5AN8G6NAFR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NDJR | H5AN8G6NAFR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasi | 512M x 16 | 512M x 16 |
| Kadar Data | 3200 Mbps (DDR4-3200) | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | 96-ball FBGA (13mm x 7.5mm) | TFBGA-96 (rectangular) |
| Number of Terminals | 96 | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 cycles (at 3200 Mbps) | — |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | — |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| VDD Supply Voltage | — | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | — | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | — | 2.5 V +0.25/-0.125 V |
| Jenis Antaramuka | — | DDR4 (parallel, double data rate) |
| Speed Bins Supported | — | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| Refresh | — | Auto / Self Refresh |
| DLL | — | DLL ON mode for speed bin operation |
| Clock | — | Differential clock (CK/CK#) |
| Jenis Pemasangan | — | Surface Mount |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Status RoHS | — | Compliant (Lead-Free & Halogen-Free) |
| Composition | — | CMOS |