H5AN8G8NCJR-PBC vs H5ANAG8NBJR-PBC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-PBC disebabkan oleh SK hynix dan H5ANAG8NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5AN8G8NCJR-PBC H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5AN8G8NCJR-PBC H5ANAG8NBJR-PBC
Merek SK hynix SK hynix
Kategori Memory ICs DRAM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Saiz Ingatan 8 Gb (1 GB) —
Organisasi 1G x 8 (x8) x8
Supply Voltage (VDD) 1.2 V 1.2 V
Interface Voltage (VDDQ) 1.2 V (SSTL12) —
Kadar Data [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] —
Kemasan 78-ball FBGA FBGA-78 (7.5 mm x 11 mm)
Jenis Pemasangan Surface Mount Surface Mount
Architecture CMOS, fully synchronous, dual-edge clocked —
Bank Structure 8 internal banks, bank-group architecture —
Burst Length BL8 —
Ciri-ciri ODT, DM, DQS strobes, programmable CAS latency, self-refresh —
Die Revision Family CJR (H5AN8G8NCJR-xxC) —
Status RoHS Lead-Free & Halogen-Free Compliant (Lead-Free & Halogen-Free per Hynix family datasheet)
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh Auto-refresh and self-refresh Self refresh, 1x/2x/4x refresh modes
Typical Applications PC/server main memory, embedded solder-down memory —
Density — 16 Gbit (2 GB)
Speed Grade / Data Rate — PBC suffix, DDR4-2666 class
Bank Architecture — 16 banks in 4 bank groups (DDR4 standard)
Prefetch — 8n
Jenis Antaramuka — Parallel, SSTL12
CAS Latency (typical bin) — [DATA_NEEDED: CAS latency]
Die Revision — BJR
Aras MSL — [DATA_NEEDED: moisture sensitivity level]
Standard Package Quantity — [DATA_NEEDED: standard quantity]

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