H5AN8G8NCJR-PBC vs H5ANAG8NBJR-PBC 比較
詳細並排比較 H5AN8G8NCJR-PBC 由 SK hynix 與 H5ANAG8NBJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-PBC | H5ANAG8NBJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gb (1 GB) | — |
| 組織 | 1G x 8 (x8) | x8 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| 資料速率 | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | — |
| 封裝 | 78-ball FBGA | FBGA-78 (7.5 mm x 11 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | — |
| 功能特色 | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | — |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| RoHS 狀態 | Lead-Free & Halogen-Free | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | Auto-refresh and self-refresh | Self refresh, 1x/2x/4x refresh modes |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Density | — | 16 Gbit (2 GB) |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| 介面類型 | — | Parallel, SSTL12 |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Die Revision | — | BJR |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |