H5ANAG6NAMR-UHC vs H5ANAG6NBJR-VKC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NAMR-UHC disebabkan oleh SK hynix dan H5ANAG6NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr H5ANAG6NAMR-UHC H5ANAG6NBJR-VKC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Memory Density 16 Gbit (2 GB) 16Gb (2GB)
Organisasi 1G x 16 [DATA_NEEDED: x16 organization per datasheet]
Speed Grade / Data Rate DDR4-2400 (UHC bin, PC4-19200) —
Supply Voltage (VDD) 1.2 V —
Architecture CMOS DDR4 with bank groups —
Power Class Normal Power —
Kemasan FBGA-96 (PBGA96) FBGA-96 (PBGA96)
Jenis Pemasangan Surface Mount (BGA solder ball) Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] -40C to +95C (family grade reference)
Refresh Self-refresh and auto-refresh (DDR4 standard 64 ms) —
Latensi CAS [DATA_NEEDED: CL for UHC bin] —
Jenis Antaramuka Parallel, synchronous, double data rate —
Available Speed Bins (family) PB / RD / TF / UH / VK —
Application Class Main memory, embedded, industrial —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Status Lingkungan Hidup Active production —
Manufacturer — SK Hynix
Part Number — H5ANAG6NBJR-VKC
Kadar Data — 2666 Mbps (per family reference, VKC speed code)
Tegangan Pemberi Arus — 1.2 V (DDR4 standard)
Antaramuka — DDR4, SSTL-12
Auto Self-Refresh — Yes
Data Mask Function — Yes
Asynchronous Reset — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes

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