H5ANAG6NAMR-UHC vs H5ANAG6NCMR-XNI Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NAMR-UHC disebabkan oleh SK hynix dan H5ANAG6NCMR-XNI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG6NCMR-XNI H5ANAG6NCMR-XNI - DDR4 16Gb 3200Mbps DRAM | SK Hynix

H5ANAG6NCMR-XNI - DDR4 16Gb 3200Mbps DRAM | SK Hynix

H5ANAG6NCMR-XNI ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NAMR-UHC H5ANAG6NCMR-XNI
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM (volatile DRAM)
Memory Density 16 Gbit (2 GB) —
Organisasi 1G x 16 —
Speed Grade / Data Rate DDR4-2400 (UHC bin, PC4-19200) —
Supply Voltage (VDD) 1.2 V —
Architecture CMOS DDR4 with bank groups —
Power Class Normal Power Normal Power
Kemasan FBGA-96 (PBGA96) FBGA-96
Jenis Pemasangan Surface Mount (BGA solder ball) Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
Refresh Self-refresh and auto-refresh (DDR4 standard 64 ms) —
Latensi CAS [DATA_NEEDED: CL for UHC bin] —
Jenis Antaramuka Parallel, synchronous, double data rate —
Available Speed Bins (family) PB / RD / TF / UH / VK —
Application Class Main memory, embedded, industrial —
Status RoHS [DATA_NEEDED: RoHS status] —
Status Lingkungan Hidup Active production —
Saiz Ingatan — 16 Gb
Memory Organization — 1G x 16
Kadar Data — 3200 Mbps (DDR4-3200, XN speed bin)
Tegangan Pemberi Arus — 1.2 V
Technology — CMOS Double Data Rate IV Synchronous DRAM
Antaramuka — Parallel (DDR4)
Product Status — Active
Application Domain — Main memory, industrial controllers, computing modules, consumer electronics
Memory Format — DRAM
Speed Bin Family — UH/VK/WM/XN
VPP Supply Voltage — [DATA_NEEDED: VPP Supply Voltage]
Aras MSL — [DATA_NEEDED: MSL Level]

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