H5ANAG6NAMR-UHC vs H5ANAG6NCMR-XNI 比較
詳細並排比較 H5ANAG6NAMR-UHC 由 SK hynix 與 H5ANAG6NCMR-XNI 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG6NAMR-UHC | H5ANAG6NCMR-XNI |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Memory Density | 16 Gbit (2 GB) | — |
| 組織 | 1G x 16 | — |
| Speed Grade / Data Rate | DDR4-2400 (UHC bin, PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Architecture | CMOS DDR4 with bank groups | — |
| Power Class | Normal Power | Normal Power |
| 封裝 | FBGA-96 (PBGA96) | FBGA-96 |
| 安裝類型 | Surface Mount (BGA solder ball) | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Refresh | Self-refresh and auto-refresh (DDR4 standard 64 ms) | — |
| CAS 延遲 | [DATA_NEEDED: CL for UHC bin] | — |
| 介面類型 | Parallel, synchronous, double data rate | — |
| Available Speed Bins (family) | PB / RD / TF / UH / VK | — |
| Application Class | Main memory, embedded, industrial | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| 生命週期狀態 | Active production | — |
| 記憶體容量 | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| 資料速率 | — | 3200 Mbps (DDR4-3200, XN speed bin) |
| 供應電壓 | — | 1.2 V |
| Technology | — | CMOS Double Data Rate IV Synchronous DRAM |
| 介面 | — | Parallel (DDR4) |
| Product Status | — | Active |
| Application Domain | — | Main memory, industrial controllers, computing modules, consumer electronics |
| Memory Format | — | DRAM |
| Speed Bin Family | — | UH/VK/WM/XN |
| VPP Supply Voltage | — | [DATA_NEEDED: VPP Supply Voltage] |
| MSL 等級 | — | [DATA_NEEDED: MSL Level] |