H5ANAG6NBJR-RDC vs H5ANAG6NCR-PBC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NBJR-RDC disebabkan oleh SK hynix dan H5ANAG6NCR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NBJR-RDC H5ANAG6NCR-PBC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Memory Organization 16Gb x16 —
Density 16 Gb 16Gb (2GB)
Kadar Data 2666 Mbps (speed grade -RDC) —
Supply Voltage (VDD) 1.2 V —
Antaramuka Synchronous, double data rate —
Clocking Fully synchronous to both clock edges —
Kemasan FBGA (Ball Grid Array), surface mount FBGA-96
Jenis Pemasangan Surface Mount Surface Mount
Technology CMOS —
Standard JEDEC DDR4 SDRAM —
Application Main memory —
Suhu Operasi [DATA_NEEDED: Operating Temperature Range] 0C to 85C
On-Die Termination (ODT) Supported (DDR4 feature) —
Bank Group Architecture DDR4 bank groups (per JEDEC DDR4) —
Status RoHS [DATA_NEEDED: RoHS Status] Compliant
Organisasi — x16 (1G x 16)
Tegangan Pemberi Arus — 1.14 V to 1.26 V (nominal 1.2 V)
Transfer Rate — 3200 Mbps (family, per XNCR datasheet; PBC speed grade [DATA_NEEDED: exact speed grade Mbps])
Number of Terminals — 96 balls
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask — Yes
Dynamic ODT — Yes
ZQ Calibration — Yes
CRC Function — Yes
Write Leveling — Yes
Maximum Standby Current — [DATA_NEEDED: maximum standby current for PBC speed grade]
Latensi CAS — [DATA_NEEDED: CAS latency for PBC speed grade]

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