H5TC4G63AFR-PBJ vs MT41K256M16RE-125:D Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBJ disebabkan oleh SK hynix dan MT41K256M16RE-125:D disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ AktifPengandingan Spesifikasi
| Parametr | H5TC4G63AFR-PBJ | MT41K256M16RE-125:D |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gb (256M x 16) | — |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V |
| Kemasan | 96-ball TFBGA | FBGA-96 (9x14 mm) |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Kadar Data | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1600 MT/s |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 11 |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | — |
| Density | — | 4 Gb |
| Organisasi | — | 256M x 16 |
| Suhu Operasi | — | 0C to +95C (TC) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Burst Length | — | 8, 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| Ball Pitch | — | 0.8 mm |