H5TC4G63CFR-H9J vs H5TC4G63CFR-XXI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63CFR-H9J disebabkan oleh SK hynix dan H5TC4G63CFR-xxI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63CFR-H9J | H5TC4G63CFR-xxI |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| Organisasi | 256M x 16 | 512M x 8 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V | — |
| Speed Grade | -H9 (1866 Mbps / PC3-14900) | — |
| Kemasan | 96-ball TFBGA | 78-ball FBGA |
| Number of Terminals | 96 | — |
| Temperature Grade | Industrial | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | Yes |
| RoHS Compliant | Yes | — |
| Clock Input | Fully differential (CK, CK) | — |
| Data Strobe | Differential (DQS, DQS) | — |
| On-Chip DLL | Yes | — |
| Data Mask (DM) | Yes | — |
| Supply Voltage (VDD) | — | 1.35V +0.100 / -0.067V |
| Supply Voltage (VDDQ) | — | 1.35V +0.100 / -0.067V |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| RoHS | — | Compliant |
| Kadar Data | — | [DATA_NEEDED: speed grade] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency] |
| Burst Length | — | 8 (with burst chop) |
| On-Die Termination | — | Yes |
| Refresh | — | Auto-refresh, self-refresh, TCSR |