IAUC100N04S6L014ATMA1 vs IAUC120N04S6L012ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L014ATMA1 disebabkan oleh Infineon dan IAUC120N04S6L012ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ AktifInfineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC100N04S6L014ATMA1 | IAUC120N04S6L012ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | OptiMOS 6 40V |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 °C to +175 °C (junction) |
| Kemasan | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| On-State Resistance (RDS(on)) at 10V VGS | — | 1.2 mΩ (typ) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at 20V VGS] |
| Power Dissipation (PD) at TC | — | 115 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Delivery Form | — | Tape & Reel |