IAUC100N04S6L020ATMA1 vs IAUC120N04S6L012ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L020ATMA1 disebabkan oleh Infineon dan IAUC120N04S6L012ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC100N04S6L020ATMA1 IAUC120N04S6L012ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Breakdown Voltage V(BR)DSS 40 V —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Tc) 75 W —
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΩ —
RDS(on) Typical 2.0 mΩ —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) Typical 2.0 V —
Technology OptiMOS 6 —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55 °C to +175 °C (junction)
Kemasan PG-TDSON-8 (SS08, 5x6 mm leadless) PG-TDSON-8 (TDSON-8, surface mount with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive grade —
Packaging Tape & Reel (TMA1) —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC — 120 A
Pulsed Drain Current (IDM) — 480 A
On-State Resistance (RDS(on)) at 10V VGS — 1.2 mΩ (typ)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at 20V VGS]
Power Dissipation (PD) at TC — 115 W
Automotive Qualification — AEC-Q101 qualified
Aras MSL — 1 (per JEDEC J-STD-020)
Delivery Form — Tape & Reel

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