IAUC100N04S6L025ATMA1 vs IAUCN10S7N021ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L025ATMA1 disebabkan oleh Infineon dan IAUCN10S7N021ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC100N04S6L025ATMA1 IAUCN10S7N021ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 6 40V trench MOSFET OptiMOS™ 7 (trench MOSFET)
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] [DATA_NEEDED: pulsed drain current IDM]
On-State Resistance RDS(on) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Power Dissipation (PD) at TC=25C 62 W —
Suhu Hubungan Operasi -55 C to +175 C -55 °C to +175 °C
Kemasan PG-TDSON-8 (SuperSO8 5x6 mm) PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Lead-Free Yes —
FET Type — N-Channel
Continuous Drain Current (ID) at Tc — 175 A
RDS(on) max @ VGS=10 V — 2.1 mΩ
Gate-Source Threshold (VGS(th)) typ — 3.2 V
Total Gate Charge (Qg) @ VGS=10 V — 105 nC
Input Capacitance (Ciss) — 2.98 nF
Output Capacitance (Coss) — 32 pF
Reverse Transfer Capacitance (Crss) — 7.153 nF
Power Dissipation (Pd) @ Tc — 217 W
Qualification — AEC-Q101 (Automotive)

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