IAUC100N04S6L025ATMA1 vs IAUCN10S7N021ATMA1 比較
詳細並排比較 IAUC100N04S6L025ATMA1 由 Infineon 與 IAUCN10S7N021ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ 啟用中規格比較
| 參數 | IAUC100N04S6L025ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS™ 7 (trench MOSFET) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | [DATA_NEEDED: pulsed drain current IDM] |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| 工作接面溫度 | -55 C to +175 C | -55 °C to +175 °C |
| 封裝 | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 175 A |
| RDS(on) max @ VGS=10 V | — | 2.1 mΩ |
| Gate-Source Threshold (VGS(th)) typ | — | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | — | 105 nC |
| Input Capacitance (Ciss) | — | 2.98 nF |
| Output Capacitance (Coss) | — | 32 pF |
| Reverse Transfer Capacitance (Crss) | — | 7.153 nF |
| Power Dissipation (Pd) @ Tc | — | 217 W |
| Qualification | — | AEC-Q101 (Automotive) |