IAUC100N04S6N028ATMA1 vs IAUZ30N08S5N186ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6N028ATMA1 disebabkan oleh Infineon dan IAUZ30N08S5N186ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC100N04S6N028ATMA1 IAUZ30N08S5N186ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 40V —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 N-Channel Power MOSFET (trench)
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) at T_C=25°C 100 A —
Pulsed Drain Current (I_DM) 400 A —
R_DS(on) max @ V_GS=10V 2.8 mΩ (typical) —
Gate Threshold Voltage (V_GS(th)) 1.5 V to 2.5 V —
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g in nC] —
Power Dissipation (P_D) at T_C=25°C 62 W —
Gambaran Suhu Operasi -55 °C to +175 °C -55 °C to +175 °C (automotive)
Kemasan PG-TDSON-8 (TDSON-8) PG-TSDSON-8-32 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualified Yes —
Status RoHS Compliant Compliant
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tj) — 30 A
Power Dissipation (PD, Tc) — 41 W
On-State Resistance (RDS(on)) — 18.6 mΩ (typical, VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Automotive Qualification — AEC-Q101 qualified
Aras MSL — [DATA_NEEDED: MSL rating]
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga