IAUC120N04S6L012ATMA1 vs IAUC100N04S6L020ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N04S6L012ATMA1 disebabkan oleh Infineon dan IAUC100N04S6L020ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC120N04S6L012ATMA1 IAUC100N04S6L020ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 6 40V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC 120 A —
Pulsed Drain Current (IDM) 480 A —
On-State Resistance (RDS(on)) at 10V VGS 1.2 mΩ (typ) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at 20V VGS] —
Power Dissipation (PD) at TC 115 W —
Gambaran Suhu Operasi -55 °C to +175 °C (junction) -55 °C to +175 °C (TJ)
Kemasan PG-TDSON-8 (TDSON-8, surface mount with exposed pad) PG-TDSON-8 (SS08, 5x6 mm leadless)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Delivery Form Tape & Reel —
FET Type — N-Channel
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
Technology — OptiMOS 6
Qualification — Automotive grade
Packaging — Tape & Reel (TMA1)

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