IAUC120N04S6L012ATMA1 vs IAUC100N04S6L020ATMA1 比較
詳細並排比較 IAUC120N04S6L012ATMA1 由 Infineon 與 IAUC100N04S6L020ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ 啟用中規格比較
| 參數 | IAUC120N04S6L012ATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 40V | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | — |
| Power Dissipation (PD) at TC | 115 W | — |
| 工作溫度範圍 | -55 °C to +175 °C (junction) | -55 °C to +175 °C (TJ) |
| 封裝 | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| Delivery Form | Tape & Reel | — |
| FET Type | — | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| Technology | — | OptiMOS 6 |
| Qualification | — | Automotive grade |
| Packaging | — | Tape & Reel (TMA1) |