IAUC41N06S5N102ATMA1 vs IAUC120N06S5L015ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC41N06S5N102ATMA1 disebabkan oleh Infineon dan IAUC120N06S5L015ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC41N06S5N102ATMA1 IAUC120N06S5L015ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 5 Power-Transistor —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W 167 W
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Kemasan PG-TDSON-8-33 (SSO8) Surface Mount PG-TDSON-8-43 (Surface Mount)
Gambaran Suhu Operasi -55C to +175C (junction) -55C to +175C (Tj)
Jenis Pemasangan Surface Mount Surface Mount (exposed pad)
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101 qualified
Status RoHS Compliant Compliant
Channel Polarity N-Channel (single) —
Technology — N-Channel MOSFET (OptiMOS 5)
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Gate-Source Voltage (VGS) max — ±20 V
Aras MSL — [DATA_NEEDED: MSL level]
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

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