IAUC60N04S6L030HATMA1 vs BSC076N04NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N04S6L030HATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC60N04S6L030HATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 6 —
Configuration Half-Bridge (2 N-Channel) Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TJ 60 A —
On-Resistance R_DS(on) at VGS=10V 3.0 mOhm (typical) —
Total Gate Charge (Qg) at VGS=10V 35 nC —
Output Capacitance (Coss) 2.128 nF —
Reverse Transfer Capacitance (Crss) 596 pF —
Gate Threshold Voltage (VGS(th)) 2 V 4 V (max, typical)
Maximum Power Dissipation (PD) at TC 75 W —
Suhu Hubungan Operasi -55 C to +175 C -55 C to +175 C
Kemasan PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per part number suffix) —
Status RoHS Compliant —
Aras MSL 1 (per JEDEC J-STD-020) —
Series — OptiMOS 3
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Technology — Trench MOSFET (OptiMOS 3)
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Kemasan / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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