IAUC60N04S6L030HATMA1 vs IAUC120N06S5N022ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N04S6L030HATMA1 disebabkan oleh Infineon dan IAUC120N06S5N022ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC60N04S6L030HATMA1 IAUC120N06S5N022ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Series OptiMOS 6 —
Configuration Half-Bridge (2 N-Channel) —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at TJ 60 A —
On-Resistance R_DS(on) at VGS=10V 3.0 mOhm (typical) —
Total Gate Charge (Qg) at VGS=10V 35 nC —
Output Capacitance (Coss) 2.128 nF —
Reverse Transfer Capacitance (Crss) 596 pF —
Gate Threshold Voltage (VGS(th)) 2 V —
Maximum Power Dissipation (PD) at TC 75 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) PG-TDSON-8-34 (TDSON EP 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per part number suffix) AEC-Q101
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) —
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) — 170 A (Tj)
On-Resistance RDS(on) max — 2.2 mΩ at VGS=10 V
Power Dissipation (PD) — 136 W (Tc)
Gambaran Suhu Operasi — [DATA_NEEDED: TJ min/max]
Technology — OptiMOS-5 trench
Channel Type — N-Channel
Kiraan Pin — 8 (with exposed pad)
Boson Bebas — Yes (per Infineon product family convention)
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) @4.5V]

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