IAUC64N08S5L075ATMA1 vs BSC123N08NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC64N08S5L075ATMA1 disebabkan oleh Infineon dan BSC123N08NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IAUC64N08S5L075ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC64N08S5L075ATMA1 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at TC=25°C | 75 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | -55C to +150C |
| Kemasan | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Bilangan Pin | 8 | — |
| Part Family | — | OptiMOS 3 |
| Channel Type | — | N-Channel |
| Configuration | — | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Status RoHS | — | Compliant with exemption |
| Automotive Qualified | — | Yes (AEC-Q101) |