IAUCN04S7N006ATMA1 vs IAUCN08S7N034ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N006ATMA1 disebabkan oleh Infineon dan IAUCN08S7N034ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7N006ATMA1 IAUCN08S7N034ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 175 A —
On-State Resistance (RDS(on)) 0.63 mOhm (typ at VGS = 10 V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Technology OptiMOS 5 (trench) —
Kemasan PG-TDSON-8-43 PG-TDSON-8-34 (TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C —
Junction Temperature Max 175 C —
Power Dissipation Max (Pd) [DATA_NEEDED: Pd max] —
Gate Charge Total (Qg) [DATA_NEEDED: Qg total] —
Automotive Qualification AEC-Q101 AEC-Q101
Lead-Free / RoHS Yes (compliant) —
Aras MSL [DATA_NEEDED: MSL rating] MSL 1 (unlimited floor life)
Manufacturer — Infineon Technologies
Series — OptiMOS™ 7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 120 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V — 3.4 mΩ
Gate-Source Threshold (V<sub>GS(th)</sub>) — 3.2 V (typ)
Total Gate Charge (Q<sub>G</sub>) — 45.8 nC @ V<sub>GS</sub>=10 V
Input Capacitance (C<sub>iss</sub>) — 1.27 nF
Output Capacitance (C<sub>oss</sub>) — 3.115 nF
Reverse Transfer Capacitance (C<sub>rss</sub>) — 23 pF
Power Dissipation (P<sub>D</sub>) — 118 W
Suhu Hubungan Operasi — -55°C to +175°C
Status RoHS — Compliant

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