IAUCN04S7N019DATMA1 vs IAUCN04S7L042GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N019DATMA1 disebabkan oleh Infineon dan IAUCN04S7L042GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
IAUCN04S7N019DATMA1 ✓ AktifInfineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN04S7N019DATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 7 40V | Trench N-Channel MOSFET |
| Configuration | Dual N-Channel (array) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 160 A (Tj) | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Kemasan | PG-TDSON-8-60 (SuperSO8) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Input Capacitance (Ciss, typ.) | 1.465 nF | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Automotive Qualification | AEC-Q101 (family) | — |
| ESD Protection | Yes (gate integrated) | — |
| Aras MSL | 1 (per JEDEC J-STD-020, family default) | 1 |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 7 40V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Gambaran Suhu Operasi | — | -55C to +175C (Tj) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |