IAUCN04S7N019DATMA1 vs IAUCN04S7L050HATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N019DATMA1 disebabkan oleh Infineon dan IAUCN04S7L050HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
IAUCN04S7N019DATMA1 ✓ AktifInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN04S7N019DATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 7 40V | Trench MOSFET, OptiMOS™ 7 40V |
| Configuration | Dual N-Channel (array) | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 160 A (Tj) | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Kemasan | PG-TDSON-8-60 (SuperSO8) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55 C to +175 C | -55 °C to +175 °C |
| Input Capacitance (Ciss, typ.) | 1.465 nF | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge] |
| Automotive Qualification | AEC-Q101 (family) | AEC-Q101 (family-level, automotive grade) |
| ESD Protection | Yes (gate integrated) | — |
| Aras MSL | 1 (per JEDEC J-STD-020, family default) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Series | — | OptiMOS™ 7 |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |