IAUCN04S7N027GATMA1 vs IAUC100N04S6N028ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N027GATMA1 disebabkan oleh Infineon dan IAUC100N04S6N028ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN04S7N027GATMA1 IAUC100N04S6N028ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vds max) 40 V —
Continuous Drain Current (Id) 117 A —
On-Resistance (Rds(on) max) 2.67 mOhm —
Power Dissipation (Pd) 70 W (Tc) —
Kemasan / Case PG-THSOG-4-1 (SSO4G 5x6) —
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55 °C to +175 °C
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL] —
Substrate Compatibility IMS substrates and legacy FR-4 —
Series — OptiMOS 6 40V
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) at T_C=25°C — 100 A
Pulsed Drain Current (I_DM) — 400 A
R_DS(on) max @ V_GS=10V — 2.8 mΩ (typical)
Gate Threshold Voltage (V_GS(th)) — 1.5 V to 2.5 V
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g in nC]
Power Dissipation (P_D) at T_C=25°C — 62 W
Kemasan — PG-TDSON-8 (TDSON-8)
Automotive Qualified — Yes

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