IAUCN08S7L033ATMA1 vs IAUC120N06S5N011ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L033ATMA1 disebabkan oleh Infineon dan IAUC120N06S5N011ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7L033ATMA1 IAUC120N06S5N011ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55°C to +175°C (Tj)
Kemasan PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-53 (SSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) —
Technology OptiMOS 7 trench MOSFET —
Status RoHS Compliant —
Aras MSL 1 (per JEDEC J-STD-020, typical for this package) 1 (per JEDEC J-STD-020)
Product Family — OptiMOS-5
Polarity / Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) — 120 A (Tc=25°C, Vgs=10V)
Pulsed Drain Current (Idm) — 310 A (Tj)
On-Resistance Rds(on) max — 1.1 mΩ at Vgs=10 V
Gate-Source Voltage (Vgs) max — ±20 V
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total value]
Power Dissipation (Pd) — 188 W (Tc=25°C)
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga